Title :
Rigorous modeling of high-speed semiconductor devices
Author :
Palankovski, Vassil ; Selberherr, Siegfned
Author_Institution :
Inst. fur Mikroelektronik, Technische Univ. Wien, Vienna, Austria
Abstract :
We present the state-of-the-art in simulation for industrial heterostructure devices based on SiGe/Si and III-V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic analyses of Heterojunction Bipolar transistors (HBTs) and High Electron Mobility Transistors (HEMTs) with Minimos-NT are presented in good agreement with measured data. The examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.
Keywords :
Ge-Si alloys; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; semiconductor device models; semiconductor materials; GaAs; HBT; HEMT; III-V compound semiconductors based devices; SiGe; SiGe/Si based devices; critical modeling; current transport models; device simulators; heterojunction bipolar transistors; heterostructure devices; high electron mobility transistors; high-speed semiconductor devices; minimos-NT; rigorous modeling; two-dimensional hydrodynamic analyses; Composite materials; Computational modeling; Costs; Energy consumption; Frequency; Germanium silicon alloys; III-V semiconductor materials; Quantum computing; Semiconductor devices; Silicon germanium;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283498
