DocumentCode
2771920
Title
Porous silicon device modeling and linearisation technique
Author
Pandit, Soumya ; Adhya, Animesh ; Pramanik, C. ; Saha, H.
Author_Institution
Dept. of Electron. & Commun. Eng., Meghnad Saha Inst. of Technol., Kolkata, India
fYear
2003
fDate
16-18 Dec. 2003
Firstpage
145
Lastpage
148
Abstract
This paper presents an approach for porous silicon device modeling by using porous silicon as a distributive RC network which will enable the simulation of a porous silicon sensor using VLSI CAD tools. Porous silicon based sensors are compatible to silicon IC processing and can be integrated on the same chip along with its signal processing unit. To make a smart sensor, along with device modeling, a linearisation scheme has also been presented, assuming a non linear response of the sensor. The scheme provides a digital path for the non-linearity correction of the sensor response but in an analog domain. The entire scheme has been simulated using T-SPICE.
Keywords
CAD; EPROM; SPICE; VLSI; amplifiers; digital signal processing chips; digital-analogue conversion; elemental semiconductors; equivalent circuits; linearisation techniques; porous semiconductors; programmable circuits; semiconductor device models; semiconductor devices; sensors; silicon; Si; T-SPICE; VLSI CAD tools; analog domain; digital path; distributive RC network; linearisation technique; nonlinear response; nonlinearity correction; porous silicon device modeling; porous silicon sensor; signal processing unit; silicon IC processing; smart sensor; Capacitance; Capacitive sensors; Chemical sensors; Dielectric constant; Electromechanical sensors; Integrated circuit modeling; Intelligent sensors; Linearization techniques; Silicon devices; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN
0-7803-7749-4
Type
conf
DOI
10.1109/EDSSC.2003.1283502
Filename
1283502
Link To Document