Title :
Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology
Author :
Trotta, Saverio ; Dehlink, Bernhard ; Knapp, Herbert ; Aufinger, Klaus ; Meister, Thomas F. ; Böck, Josef ; Simburger, Werner ; Scholtz, Arpad L.
Author_Institution :
Now with Freescale Semicond. GmbH, Munich
Abstract :
This paper presents design considerations for millimeter-wave mixers based on the Gilbert cell. The theory has been validated by a test chip fabricated in a 200 GHz fT SiGe:C bipolar technology. The chip has been designed for applications at 76 GHz. The measured single-sideband noise figure (NFSSB) is 11.2 dB while the conversion gain is 15 dB with an input-referred 1 dB compression point (ICP) and an input-referred third-order intercept point (IIP3) of +2.5 dBm and +8.5 dBm, respectively. The chip consumes 61 mA at a supply voltage of 5.5 V.
Keywords :
Ge-Si alloys; bipolar MIMIC; bipolar analogue integrated circuits; millimetre wave mixers; Gilbert cell; SiGe:C; bipolar technology; current 61 mA; frequency 200 GHz; frequency 76 GHz; gain 15 dB; highly-linear millimeter-wave mixer; low-noise mixer; noise figure 11.2 dB; voltage 5.5 V; Amplitude modulation; Gain measurement; Germanium silicon alloys; Millimeter wave measurements; Millimeter wave technology; Noise figure; Noise measurement; Semiconductor device measurement; Silicon germanium; Testing;
Conference_Titel :
Solid State Circuits Conference, 2007. ESSCIRC 2007. 33rd European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1125-2
DOI :
10.1109/ESSCIRC.2007.4430317
