Low-noise variable-gain amplifier in 90-nm CMOS for TV on mobile

Author

Tripodi, Lorenzo ; Brekelmans, Hans

Author_Institution

Philips Res., Eindhoven

fYear

2007

fDate

11-13 Sept. 2007

Firstpage

368

Lastpage

371

Abstract

Presented is a low-noise variable-gain amplifier intended for handheld TV-on-mobile in the UHF band. The circuitry, implemented in 90-nm CMOS technology, is designed for compliance with MBRAI category 2 and 3 and for robustness against the high RF input levels caused by uplink signals from cellular and connectivity services integrated in the same handheld. The overall Noise Figure is kept low by employing lossless feedback in the VGA. The effect of a back- gate control to reduce the sensitivity of the amplifier characteristics to variations in supply voltage has been studied. The test chip realized exhibits 23 dB gain that can be stepped down with 2 dB resolution, 2.6 dB NF, a -5.4 dBm IIP3 at maximum gain and 40 mW power consumption at 1.2 V supply.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; low noise amplifiers; mobile television; power consumption; CMOS; MBRAI; UHF band; VGA; gain 23 dB; low-noise variable-gain amplifier; mobile TV; noise figure 2.6 dB; power 40 mW; power consumption; size 90 nm; voltage 1.2 V; CMOS technology; Integrated circuit technology; Low-noise amplifiers; Noise figure; Noise robustness; RF signals; Radio frequency; Radiofrequency amplifiers; Signal design; TV;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Circuits Conference, 2007. ESSCIRC 2007. 33rd European

Conference_Location

Munich

ISSN

1930-8833

Print_ISBN

978-1-4244-1125-2

Type

conf

DOI

10.1109/ESSCIRC.2007.4430320

Filename

4430320