Title :
Mathematical model of shaping of a ultrathin SiO2 layer at a high-temperature oxidation of silicon
Author :
Krasnikov, G.Ya.
Author_Institution :
Res. & Dev. Inst. for Molecular Electron., MICRON, Moscow, Russia
Abstract :
On the grounds of beliefs about polymeric structure of a ultrathin silicon dioxide layer obtained by a rapid thermal oxidation (RTO) in a temperature range 950-115°C, the model of structure of a boundary layer in a system Si/SiO2 is offered. The semiquantitative analysis of a spatial distribution of polymetric compounds of different length in a boundary layer is carried out. The outcomes of model operation indirectly prove to be true by known experimental datas.
Keywords :
elemental semiconductors; interface structure; oxidation; rapid thermal processing; semiconductor process modelling; semiconductor thin films; silicon; silicon compounds; 950 to 1150 degC; Si-SiO2; Si/SiO2 system; boundary layer structure; mathematical model; polymeric structure; polymetric compounds; rapid thermal oxidation; semiquantitative analysis; silicon oxidation; ultrathin SiO2 layer; ultrathin silicon dioxide layer; Atomic layer deposition; Chemicals; Concrete; Lattices; Mathematical model; Oxidation; Polymers; Silicon;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283551
