DocumentCode :
2773292
Title :
Studies on the mechanism of high resolution and high aspect ratio in DFVP
Author :
Wen, Tingting ; Zhang, Bin ; Wang, Peiqing
Author_Institution :
Inst. of Nucl. Energy Technol., Tsinghua Univ., Beijing, China
fYear :
2003
fDate :
16-18 Dec. 2003
Firstpage :
471
Lastpage :
473
Abstract :
Development-free vapor photolithography (DFVP) is a unique all-dry pattern transfer technique with many advantages such as superior quality, high aspect ratio and high resolution. This paper analyzes the mechanism of the DFVP and proposes a theory model to explain the cause of its advantages. Experiments are designed and carried out, the result shows the polymer is the main factor affecting the resolution and aspect ratio of the pattern.
Keywords :
etching; photolithography; polymer films; SiO2-Si; development free vapor photolithography; dry pattern transfer; etching; polymer; Couplings; Etching; Hafnium; Lithography; Manufacturing; Microelectronics; Polymer films; Resists; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
Type :
conf
DOI :
10.1109/EDSSC.2003.1283575
Filename :
1283575
Link To Document :
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