DocumentCode
2773532
Title
First demonstration of extremely low-threshold AlGaAs/GaAs quantum wire-like lasers grown on V-grooved GaAs/Si substrates
Author
Hasegawa, Y. ; Egawa, T. ; Jimbo, T. ; Umeno, M.
Author_Institution
Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan
fYear
1994
fDate
19-23 Sep 1994
Firstpage
75
Lastpage
76
Abstract
The authors report first demonstration of extremely low-threshold AlGaAs/GaAs quantum wire-like lasers grown on V-grooved GaAs/Si substrates. Threshold current as low as 9.8 mA and 16 mA were realized under room-temperature pulsed and continuous-wave conditions, respectively
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; semiconductor lasers; semiconductor quantum wires; 16 mA; 298 K; 9.8 mA; AlGaAs-GaAs; AlGaAs/GaAs; GaAs-Si; V-grooved substrates; continuous-wave condition; low-threshold lasers; pulsed conditions; quantum wire-like lasers; room-temperature conditions; threshold current; Chemical lasers; Gallium arsenide; Laser modes; Optical pulses; Pulsed laser deposition; Quantum well lasers; Scanning electron microscopy; Thermal stresses; Threshold current; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519141
Filename
519141
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