Title :
980 nm pump source lasers for EDFAs
Author :
Hall, J. ; Farries, M. ; Ogden, R. ; Bradley, R. ; Nicklin, R.
Author_Institution :
GEC-Marconi Mater. Technol. Ltd., Caswell, UK
Abstract :
Strained layer GaInAs/GaAlAs ridge waveguide lasers operating at 980 nm are being developed for exploitation as pump sources for erbium doped fibre optical amplifiers (EDFAs). Advances in design and fabrication now allow higher output powers to be achieved, and initial degradation problems have been overcome to give more reliable, longer lived devices to produce practical optical pump sources
Keywords :
III-V semiconductors; aluminium compounds; erbium; fibre lasers; gallium arsenide; gradient index optics; indium compounds; optical communication equipment; optical pumping; optical waveguides; rectangular waveguides; semiconductor junction lasers; 980 nm; Er3+ doped fibre amplifiers; GRIN layers; GaInAs-GaAlAs ridge waveguide lasers; III-V semiconductors; design; fabrication; higher output powers; optical communication; pump source lasers; strained layers;
Conference_Titel :
Optical Amplifiers for Communications, IEE Colloquium on
Conference_Location :
London
