Title :
Bulk p-i-n heterojunction solar cells made from hyperbranched phthalocyanine polymers
Author :
Li, Yong ; Dhakal, Rabin ; Xu, Tingting ; Galipeau, David ; Yan, Xingzhong
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., South Dakota State Univ., Brookings, SD, USA
Abstract :
A wet chemistry technique was developed to fabricate a new type of organic-inorganic hybrid solar cells with bulk p-i-n heterojunctions (“i”, an intrinsic absorber layer). Three new hyperbranched phthalocyanine polymers, namely H2PPc, TiOPPc and CuPPc, have been synthesized and implanted into extremely-thin absorber (ETA) solar cells with a cell structure of indium tin oxide (ITO)/TiO2 (n-type, made by sol gel method or Solaronix method)/TiO2:phthalocyanine polymer/CuSCN/Au (or carbon) as the strong light-absorbing materials. The phthalocyanine polymers were prepared by cyclotetramerization reaction of 1,3-bis(3,4-dicyanophenoxy)benzene with/without respective metal salts under the catalysis of 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU). The phthalocyanine polymers were mixed with TiO2 sol gel and spin-coated onto n-type TiO2 pre-coated ITO glass substrate, followed by casting a saturated CuSCN solution in dipropylsulfide to form a p-type semiconducting layer. After coating a counter electrode onto this p-type layer, a cell structure of ITO/TiO2/TiO2:phthalocyanine polymer/CuSCN/Au (or carbon) was thus fabricated. A power conversion efficiency of 0.23% has been achieved from these devices by our preliminary work. Successful application of organic semiconductors in ETA solar cells has been demonstrated.
Keywords :
catalysts; polymer films; sol-gel processing; solar absorber-convertors; solar cells; ETA solar cells; ITO; ITO glass substrate; Si; bulk P-l-N heterojunction solar cells; cyclotetramerization reaction; extremely-thin absorber solar cells; hyperbranched phthalocyanine polymers; intrinsic absorber layer; p-type semiconducting layer; power conversion efficiency; sol gel method;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5616498