Title :
Analysis of SEU parameters for the study of SRAM cells reliability under radiation
Author :
Castellani-Coulié, K. ; Portal, J.-M. ; Micolau, G. ; Aziza, H.
Author_Institution :
IM2NP, Univ. Aix-Marseille, Marseille, France
Abstract :
A simplified RC circuit is used to simulate the effects of ionizing particles in a 90nm SRAM. The main characteristic of the memory cell bit flip are discussed and compared for characteristic parameters. The effect of the surrounded circuit on the impacted transistor is discussed in order to extract parameters characteristic of the SEU occurrence.
Keywords :
SRAM chips; integrated circuit reliability; SEU parameters; SRAM cells reliability; impacted transistor; ionizing particles; memory cell bit flip; simplified RC circuit; single event upset; size 90 nm; surrounded circuit; Capacitance; Integrated circuit modeling; Random access memory; Single event upset; Solid modeling; Three dimensional displays; Transistors; Critical Charge; SRAM; Single Event Upset; TCAD simulation;
Conference_Titel :
Test Workshop (LATW), 2011 12th Latin American
Conference_Location :
Porto de Galinhas
Print_ISBN :
978-1-4577-1489-4
DOI :
10.1109/LATW.2011.5985895
