4H-SiC PIN diodes for microwave applications

Author

Zekentes, K. ; Camara, N. ; Romanov, L. ; Kirillov, A. ; Boltovets, M.S. ; Lebedev, A. ; Vassilevski, K.V.

Author_Institution

Foundation for Res. & Technol.-Hellas, Crete, Greece

Volume

1

fYear

2005

fDate

3-5 Oct. 2005

Firstpage

17

Abstract

4H-SiC p-i-n diodes were designed, fabricated and characterized with the aim to be used for microwave applications. The best diodes with mesa structure diameters between 80 and 150 μm, exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-2 Ω, a capacitance below 0.5 pF at punchthrough voltage of 100 V and carrier effective lifetime between 15-27 ns. X-band microwave switches based on 4H-SiC p-i-n diodes are demonstrated for the first time. The switches exhibited insertion losses as low as 0.7 dB, isolation up to 25 dB and operation in pulsed high microwave powers of 2.2 k W in isolation mode and 0.4 kW in insertion mode.

Keywords

carrier lifetime; microwave diodes; microwave switches; p-i-n diodes; silicon compounds; wide band gap semiconductors; 100 mA; 1100 V; 15 to 27 ns; 2.2 kW; 80 micron; PIN diodes; SiC; X-band microwave switches; blocking voltage; carrier effective lifetime; differential resistance; insertion losses; insertion mode; isolation mode; mesa structure diameters; microwave powers; Charge carrier lifetime; Communication switching; Electromagnetic heating; Gallium arsenide; Microwave ovens; P-i-n diodes; Power semiconductor switches; Semiconductor diodes; Silicon carbide; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International

Print_ISBN

0-7803-9214-0

Type

conf

DOI

10.1109/SMICND.2005.1558702

Filename

1558702