DocumentCode
2777667
Title
Optical properties of CdS thin films obtained by CSVT under different growth conditions and their influence in prototype PV devices
Author
Sastre-Hernández, J. ; Contreras-Puente, G. ; Mendoza-Pérez, R. ; Aguilar-Hernández, J. ; Ortega-Cervantes, G. ; Vigil-Galán, O. ; Chicana-Nuncebay, W. ; Znaidi, L.
Author_Institution
Escuela Super. de Fis. y Mat., I.P.N., Mexico City, Mexico
fYear
2010
fDate
20-25 June 2010
Abstract
We present in this work studies of photoluminescence at room temperature, AFM and optical transmission measurements of Cadmium Sulphide (CdS) films grown by the Closed Space Vapor Transport (CSVT) technique. Normally as-grown CdS-CSVT thin film samples do not show luminescence at room temperature, due mainly to the high density of deep non-radiative recombination centers at the band gap, thus in principle it is logic to think that a change of the critical growth parameters allows us to promote a reduction of the density of defects giving rise to a better quality of CdS-CSVT films, which can show luminescence at room temperature and are also suitable for PV-applications. Morphological changes in the films are also showed by AFM measurements, when we use different kinds of atmospheric molecular species (Ar, N2 and O2/Ar) in the growth chamber. Our PV-devices in the superstrate configuration, using these CdS thin films as windows layer, present also a relative increment in the conversion efficiency, when the pressure in the growth chamber increases. The comparative J-V measurements of the solar cells processed in this work are also illustrated and discussed.
Keywords
II-VI semiconductors; cadmium compounds; semiconductor growth; semiconductor thin films; solar cells; AFM; CdS; CdS thin films; closed space vapor transport; optical transmission measurements; photoluminescence; prototype PV devices; solar cells; Cadmiun Sulfide; Solar Cells; Thin Films;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5616702
Filename
5616702
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