Title :
An Overview of Semiconductor Technologies and Circuits for Terahertz Communication Applications
Author :
Rieh, Jae-Sung ; Kim, Dong-Hyun
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
fDate :
Nov. 30 2009-Dec. 4 2009
Abstract :
An overview of the current status of the semiconductor device technologies and circuits for terahertz applications, especially for the broadband wireless communication systems, is provided in this work. Comparison between various semiconductor device technologies such as III-V HEMTs and HBTs, SiGe HBTs, and Si MOSFETs is presented and the current record performances of each technology are described. In addition, the best performing amplifiers, oscillators, and mixers as of today for possible terahertz communication system applications are presented and related issues are discussed.
Keywords :
Ge-Si alloys; III-V semiconductors; MOSFET; amplifiers; elemental semiconductors; heterojunction bipolar transistors; high electron mobility transistors; mixers (circuits); oscillators; silicon; terahertz wave devices; HBT; HEMT; MOSFET; Si; SiGe; amplifiers; broadband wireless communication systems; circuits; mixers; oscillators; semiconductor device technologies; terahertz communication; Broadband communication; Circuits; HEMTs; III-V semiconductor materials; MODFETs; Semiconductor devices; Silicon germanium; Submillimeter wave communication; Submillimeter wave technology; Wireless communication;
Conference_Titel :
GLOBECOM Workshops, 2009 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5626-0
Electronic_ISBN :
978-1-4244-5625-3
DOI :
10.1109/GLOCOMW.2009.5360683
