Title :
The influence of valence-band well depth on optical gain uniformity in 1.3-μm InP-based strained-layer multiple-quantum-well lasers
Author :
Seki, Shunji ; Yokoyama, Kiyoyuki ; Sotirelis, Paul
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
We compare the optical gain uniformity in 1.3-μm InAsP/InP (ΔEc:ΔEv=0.56:0.44) and InGaAsP/InP (ΔEc:ΔEv=0.40:0.60) compressively-strained multiple-quantum-well (MQW) lasers with a wide-bandgap barrier. We quantitatively demonstrate that the valence-band well depth plays a dominant role in determining the optical gain uniformity in InP-based MQW lasers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; 1.3 mum; InAsP-InP; InAsP/InP; InGaAsP-InP; InGaAsP/InP; InP-based strained-layer multiple-quantum-well lasers; compressively-strained multiple-quantum-well laser; optical gain uniformity; valence-band well depth; wide-bandgap barrier; Application software; Electron optics; Fiber lasers; Indium phosphide; Laboratories; Laser noise; Optical distortion; Optical materials; Poisson equations; Quantum well devices;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519171
