• DocumentCode
    277864
  • Title

    Tuning characteristics of an external cavity semiconductor laser

  • Author

    Skipper, B.F. ; Olesen, H.

  • Author_Institution
    Res. & Dev., Jydsk Telefon, Arhus-Tranbjerg J, Denmark
  • fYear
    1991
  • fDate
    33256
  • Firstpage
    42430
  • Lastpage
    42432
  • Abstract
    Tuning properties of a 1.3 μm external AR-coated semiconductor laser (ECL) with grating feedback and a cavity length of approximately 40 mm have been investigated. The measured threshold current, Lorentzian linewidth and output power have been compared with theoretical simulations based on an optical transmission line model, which is capable of handling strong and frequency selective optical feedback in semiconductor lasers. An analysis technique to determine the Lorentzian linewidth in the presence of Gaussian linewidth broadening is presented. The Lorentzian linewidth can consistently be determined within 10% independent of the length of the delay fibre
  • Keywords
    laser cavity resonators; laser tuning; optical communication equipment; semiconductor junction lasers; spectral line breadth; 1.3 micron; Gaussian linewidth broadening; Lorentzian linewidth; external cavity semiconductor laser; grating feedback; optical transmission line model; output power; threshold current;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Sources for Coherent Optical Communication, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    180847