Title :
Laser doping technique for II-VI semiconductors, ZnSe and CdTe
Author :
Hatanaka, Y. ; Aoki, Toyohiro ; Niraula, M. ; Aoki, Yuya ; Nakanishi, Y.
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
Abstract :
The p-type doping of wide band gap II-VI semiconductors is a key technology for the formation of ohmic contacts with metal electrodes in device fabrication. Using alkaline metal compounds such as Na2Se or Na2Te which contain dopant atoms, laser doping experiments were carried out for ZnSe and CdTe. The influences of laser light treatment on the electrical properties of semiconductors were studied mainly by means of the Hall effect measurements and current-voltage (I-V) characteristics. As a result of p-type doping, the resistivity of ZnSe drastically decreased from 105 to 10-2 Ω cm and the value of hole carrier concentration increased up to 4.8×1019 cm-3. CdTe the resistivity decreased from 105 to 10-1 Ω cm. Formation of p-type ohmic contact in ZnSe and CdTe diodes was also investigated
Keywords :
Hall effect; II-VI semiconductors; cadmium compounds; electrical resistivity; hole density; laser ablation; laser beam annealing; ohmic contacts; semiconductor doping; zinc compounds; 105 to 1E-1 ohmcm; 105 to 1E-2 ohmcm; CdTe; Hall effect; I-V characteristics; LED; ZnSe; alkaline metal compounds; electrical properties; excimer laser doping; hole carrier concentration; laser diodes; laser doping technique; laser light treatment; metal electrodes; ohmic contacts; p-type doping; resistivity; temperature distribution; wide band gap II-VI semiconductors; Atomic beams; Conductivity; Electrodes; Ohmic contacts; Optical device fabrication; Semiconductor device doping; Semiconductor lasers; Tellurium; Wideband; Zinc compounds;
Conference_Titel :
Information Display, 1999. ASID '99. Proceedings of the 5th Asian Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
957-97347-9-8
DOI :
10.1109/ASID.1999.762715
