Title :
0.98 μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer
Author :
Usami, M. ; Matsushima, Y.
Author_Institution :
KDD Kamifukuoka R&D Labs., Saitama, Japan
Abstract :
Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; gradient index optics; indium compounds; laser beams; quantum well lasers; semiconductor superlattices; 0.98 mum; GaAs-InGaP; GaAs/InGaP; InGaAs-InGaP; InGaAs/InGaP; carrier confinement; graded index effect; internal quantum efficiency; multiple quantum barrier; strained quantum well lasers; superlattice optical confinement layer; threshold current density; Carrier confinement; Electrons; Gallium arsenide; Indium gallium arsenide; Optical superlattices; Quantum cascade lasers; Quantum well lasers; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519172
