DocumentCode
2779342
Title
Field-effect transistors based on organic semiconducting materials
Author
Damaeeanu, M.D. ; Bruma, M.
Author_Institution
Petru Poni Inst. of Macromolecular Chem., Ghica Voda
Volume
2
fYear
2005
fDate
5-5 Oct. 2005
Firstpage
467
Abstract
Four oligofluorene-thiophene designed for use as active layers in field-effect transistors (OFETs) have been prepared using Suzuki coupling reduction. The electronic and optical properties of the cast films have been investigated. All the molecules presented reversible oxidation processes at low oxidation potentials. Electronic properties of the oligomers match well with the work-function of the metal electrodes. The absorption maxima of the films are strongly shifted to blue region, as compared with the absorption of oligomer solutions due to the single molecule. Molecular modeling evidenced the closely packed stacking arrangements in cast films. High mobility OFETs were realised with synthesized materials
Keywords
field effect transistors; organic semiconductors; oxidation; semiconductor thin films; Suzuki coupling reduction; absorption; closely packed stacking arrangements; electronic properties; field-effect transistors; metal electrodes; molecular modeling; oligofluorene-thiophene; oligomers; optical properties; organic semiconducting materials; oxidation processes; semiconducting thin films; work-function; Absorption; FETs; OFETs; Optical films; Optical materials; Organic materials; Oxidation; Semiconductivity; Semiconductor films; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Conference_Location
Sinaia
Print_ISBN
0-7803-9214-0
Type
conf
DOI
10.1109/SMICND.2005.1558828
Filename
1558828
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