Title :
The conductive bridging random access memory (CBRAM): A non-volatile multi-level memory technology
Author :
Liaw, Corvin ; Kund, Michael ; Schmitt-Landsiedel, Doris ; Ruge, Ingolf
Author_Institution :
Qimonda AG, Munich
Abstract :
CBRAM is investigated as a NVM memory with respect to retention characteristics and multilevel capability. The CB-junction is characterised by photocurrent and photoluminescence. Measurement results showing the long-term data retention of the CBRAM technology are presented. The stability of four levels corresponds to the capability to store two bits. Scalability is shown with suitable switching characteristics and area-independent on-resistance down to sub 40 nm junction size. Operating conditions and circuits are introduced for CBRAM writing and voltage sensing.
Keywords :
photoconductivity; photoluminescence; random-access storage; switching; CBRAM writing; NVM memory; conductive bridging random access memory; nonvolatile multilevel memory technology; photocurrent; photoluminescence; retention characteristics; switching characteristics; voltage sensing; Costs; Electrodes; Nonvolatile memory; Phase change random access memory; Photoconductivity; Random access memory; Scalability; Semiconductor materials; Silver; Voltage;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430919
