DocumentCode :
2780706
Title :
X-ray investigation of thick epitaxial GaAs/InGaAs layers on Ge pseudosubstrates
Author :
Khan, A. Rehman ; Mundboth, K. ; Stangl, J. ; Bauer, G. ; Von Känel, H. ; Fedorov, A. ; Isella, Giovanni ; Colombo, D.
fYear :
2005
fDate :
17-18 Sept. 2005
Firstpage :
323
Lastpage :
328
Abstract :
We present an investigation of a series of samples with GaAs/InGaAs layers grown on Ge/Si pseudo-substrates. The strain in the GaAs and InGaAs layers were calculated after measuring the lattice constants of the layers using the X-ray diffraction technique. Both layers were found to be under low tensile stress resulting from the lattice mismatch and the difference in thermal expansion coefficients between the adjacent layers. We explore a new concept based on counterbalancing this thermal stress.
Keywords :
III-V semiconductors; X-ray diffraction; elemental semiconductors; gallium arsenide; germanium; indium compounds; lattice constants; semiconductor epitaxial layers; substrates; thermal expansion; thermal stresses; GaAs-InGaAs; X-ray diffraction technique; adjacent layers; lattice mismatch; pseudosubstrates; tensile stress; thermal expansion coefficients; thermal stress; Capacitive sensors; Chemical vapor deposition; Gallium arsenide; Germanium silicon alloys; Indium gallium arsenide; Lattices; Silicon germanium; Strain measurement; Tensile stress; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Technologies, 2005. Proceedings of the IEEE Symposium on
Print_ISBN :
0-7803-9247-7
Type :
conf
DOI :
10.1109/ICET.2005.1558902
Filename :
1558902
Link To Document :
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