High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Author

Raeissi, B. ; Piscator, J. ; Engström, O. ; Hall, S. ; Buiu, O. ; Lemme, M.C. ; Gottlob, H.D.B. ; Hurley, P.K. ; Cherkaoui, K. ; Osten, H.J.

Author_Institution

Chalmers Univ. of Technol., Goteborg

fYear

2007

fDate

11-13 Sept. 2007

Firstpage

283

Lastpage

286

Abstract

Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd₂O₃ prepared by MBE and ALD, and for HfO₂ prepared by reactive sputtering, by measuring the frequency dependence of MOS capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.

Keywords

atomic layer deposition; capacitance measurement; dielectric materials; dielectric thin films; gadolinium compounds; hafnium compounds; interface states; molecular beam epitaxial growth; Gd₂O₃; HfO₂; MOS capacitance; atomic layer deposition; capacitance frequency spectroscopy; electron capture; high-k dielectrics; high-k-oxide/silicon interfaces; insulator/silicon interface states; interface electron states; molecular beam epitaxy; reactive sputtering; Capacitance; Dielectrics and electrical insulation; Frequency; Hafnium oxide; High-K gate dielectrics; Interface states; Radioactive decay; Silicon; Spectroscopy; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European

Conference_Location

Munich

ISSN

1930-8876

Print_ISBN

978-1-4244-1123-8

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2007.4430933

Filename

4430933