Title :
2-6 GHz GaAs MMIC power amplifier
Author :
Zhu, Xuanang ; Chen, Xiaojian ; Ling, Jinting
Author_Institution :
Nanjing Electron. Devices Inst., China
Abstract :
Design approach and performance of ion-implanted broadband MMIC power amplifier using 0.5 μm gate length FET is reported. The lossy matched MMIC amplifier is designed and optimized with nonlinear Root model. The amplifier has better than 3:1 bandwidth, 1 to 1.4 watt CW output power, and greater than 20 percent power-added efficiency (PAE) across the 2-6.7 GHz frequency band. The linear gain is 17 dB with a flatness of 0.75 dB. Input/output VSWRs are better than 2:1. The chip size is 0.1 mm×2.6 mm×2.7 mm
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium arsenide; impedance matching; integrated circuit design; wideband amplifiers; 0.5 micron; 1 to 1.4 W; 17 dB; 2 to 6.7 GHz; CW output power; GaAs; MMIC power amplifier; chip size; flatness; input/output VSWRs; ion-implanted broadband amplifier; linear gain; lossy matched amplifier; nonlinear Root model; power-added efficiency; Bandwidth; Broadband amplifiers; Design optimization; FETs; Frequency; Gain; Gallium arsenide; MMICs; Power amplifiers; Power generation;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000
Conference_Location :
Beijing
Print_ISBN :
0-7803-5743-4
DOI :
10.1109/ICMMT.2000.895639
