DocumentCode :
2782471
Title :
Wafer charging during ion implantation and its effect on the degradation of thin oxide of mos device
Author :
Fujii, H. ; Ooishi, T. ; Muto, H. ; Nakanishi, K. ; Ikeda, S.
Author_Institution :
Mitsubishi Electric Corporation
fYear :
1991
fDate :
1991
Firstpage :
207
Lastpage :
212
Keywords :
Capacitance measurement; Capacitance-voltage characteristics; Degradation; Electric variables measurement; Ion implantation; MOS capacitors; MOS devices; Probes; Resists; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1991. CEIDP. 1991 Annual Report. Conference on
Type :
conf
DOI :
10.1109/CEIDP.1991.763359
Filename :
763359
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2782471
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