Title :
Analytical Study of Impurity Doping Effects on Electromigration of CU Interconnects by Employing Comprehensive Scattering Model
Author :
Yokogawa, S. ; Kakuhara, Y. ; Tsuchiya, H. ; Kikuta, K.
Author_Institution :
Adv. Device Dev. Div., NEC Electron. Corp., Kanagawa
Abstract :
We investigated the impurity (Al) doping effect on resistivity of damascene Cu interconnects with decomposing into surface, grain boundary, and impurity scattering factors by employing comprehensive scattering model. The surface scattering is dominant for resistivity increasing. Electromigration-induced Cu drift is suppressed as Al concentration increases. The electromigration lifetime is improved by suppression of the Cu diffusion due to piled-up Al at the top surface of Cu interconnects.
Keywords :
aluminium; copper; electromigration; grain boundaries; integrated circuit interconnections; semiconductor doping; Al; Al concentration; Cu; comprehensive scattering model; damascene Cu interconnects; drift velocity; electromigration lifetime; grain boundary; impurity doping effects; impurity scattering factors; surface scattering; Conductivity; Copper; Doping; Electromigration; Electron mobility; Grain boundaries; Impurities; Life testing; Scattering; Semiconductor process modeling; CuAl; comprehensive scattering model; drift velocity; electromigration; impurity doping; resistivity;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369879
