DocumentCode :
2782841
Title :
Reliability and Processing Effects of Bandgap Engineered SONOS (BE-SONOS) Flash Memory
Author :
Wang, Szu-Yu ; Lue, Hang-Ting ; Lai, Erh-Kun ; Yang, Ling-Wu ; Yang, Tahone ; Chen, Kuang-Chao ; Gong, Jeng ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih Yuan
Author_Institution :
Macronix Int. Co. Ltd., Hsinchu
fYear :
2007
fDate :
15-19 April 2007
Firstpage :
171
Lastpage :
176
Abstract :
The reliability properties of BE-SONOS (Lue et al., 2005) are extensively studied. BE-SONOS employs a multi-layer O1/N1/O2/N2/O3 stack, where O1/N1/O2 serves as a bandgap engineered tunneling barrier that provides an efficient hole tunneling erase but eliminates the direct tunneling leakage. BE-SONOS can overcome the fundamental limitation of the conventional SONOS, for which fast erase speed and good data retention cannot be simultaneously achieved. This work provides a comprehensive understanding of the reliability of BE-SONOS. Various processes to form the critical O1/N1/O2 barrier, the trapping layer (N2), and the top blocking oxide (O3) are investigated. The results of this work provide design and processing guidelines for optimizing the performance and reliability of BE-SONOS flash memory devices.
Keywords :
flash memories; multilayers; reliability; BE-SONOS; bandgap engineered SONOS; flash memory; hole tunneling erase; multilayer stack; reliability properties; top blocking oxide; trapping layer; tunneling barrier; Charge carrier processes; Electron traps; Flash memory; Nonvolatile memory; Photonic band gap; Process design; Reliability engineering; SONOS devices; Temperature; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
Type :
conf
DOI :
10.1109/RELPHY.2007.369888
Filename :
4227629
Link To Document :
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