Title :
High sensitive THz faraday rotation measurements in doped semiconductors
Author :
Ikebe, Yohei ; Shimano, Ryo
Author_Institution :
Department of Physics, the University of Tokyo, and 2 PRESTO (JST), 113-0033, Japan
Abstract :
We present a highly sensitive terahertz Faraday measurement scheme with the detection sensitivity of Faraday rotation as small as 1 mrad. The scheme was applied to n-doped Si to examine the carrier density and mobility.
Keywords :
Charge carrier density; Dielectrics; Electrochemical impedance spectroscopy; Faraday effect; Laser mode locking; Magnetic materials; Polarization; Rotation measurement; Submillimeter wave measurements; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431086
