• DocumentCode
    2783704
  • Title

    Accelerated RF life Testing of Gan Hfets

  • Author

    Conway, A.M. ; Chen, M. ; Hashimoto, P. ; Willadsen, P.J. ; Micovic, M.

  • fYear
    2007
  • fDate
    15-19 April 2007
  • Firstpage
    472
  • Lastpage
    475
  • Abstract
    This work reports the results of the first three temperature accelerated RF life test on millimeter-wave GaN heterostructure field effect transistors (HFETs) at 10 GHz. 2times100 mum transistors were stressed at 2 dB compression with a pre RF bias condition of Ids = 100 mA/mm and Vds = 25 V. The three channel temperatures used in study were 285 degC, 315 degC and 345 degC. An activation energy of 1.80 eV was extracted giving a MTTF at Tch = 125 degC of 3.5times109 hours.
  • Keywords
    III-V semiconductors; gallium compounds; high electron mobility transistors; life testing; millimetre wave field effect transistors; reliability; wide band gap semiconductors; 1.80 eV; 10 GHz; 125 C; 285 C; 3.5times109 hours; 315 C; 345 C; GaN; HFET; RF life testing; millimeter-wave heterostructure field effect transistors; reliability; Circuit testing; Gallium nitride; HEMTs; Life estimation; Life testing; MODFETs; Plasma temperature; Radio frequency; System testing; Thermal resistance; GaN HFET; RF Life test; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    1-4244-0919-5
  • Electronic_ISBN
    1-4244-0919-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.2007.369936
  • Filename
    4227677
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2783704