Title :
A Comprehensive Model for Hot Carrier Degradation in LDMOS Transistors
Author :
Moens, P. ; Mertens, J. ; Bauwens, F. ; Joris, P. ; de Ceuninck, W. ; Tack, M.
Author_Institution :
AMI Semicond. Belgium, Oudenaarde
Abstract :
This paper presents a comprehensive yet physical model for hot carrier degradation in LDMOS transistors. The only model input parameters are the gate and drain voltage Vds and Vgs , the internal device temperature and the device width W. The model allows calculating AC degradation performance out of the DC hot carrier data. A physical explanation of the observed effects is provided, and important differences between LDMOS and standard CMOS are highlighted
Keywords :
CMOS integrated circuits; MOSFET; hot carriers; AC degradation; LDMOS transistors; hot carrier degradation; internal device temperature; standard CMOS; Breakdown voltage; CMOS technology; Degradation; Electric variables measurement; Hot carriers; Interface states; Semiconductor device modeling; Stress measurement; Temperature; Time measurement; AC degradation; LDMOS; hot carrier; hot holes; interface states; model;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369940
