DocumentCode :
278403
Title :
A transient analysis of power distribution noise in highly synchronous CMOS integrated circuits
Author :
Johnstone, K.K. ; Butcher, J.B.
Author_Institution :
Middlesex Polytech., London, UK
fYear :
1991
fDate :
33386
Firstpage :
42583
Lastpage :
42587
Abstract :
A novel simulation method has been developed to assess the magnitude and nature of power distribution noise in CMOS digital integrated circuits. The method has identified limits relating to the performance and/or size of a highly synchronous array-based architecture involving the simultaneous switching of 340000 devices. The simulation method has been developed for application to a non-array-based architecture. The analysis has identified performance limits which, for the memory reticle, are 60% lower than the required design specification and, for the processor reticle, are 40% in excess of the required design specification. For each architecture, the method has predicted the extent to which non-standard technology variants can be expected to improve performance
Keywords :
CMOS integrated circuits; digital integrated circuits; electron device noise; transients; design specification; digital integrated circuits; highly synchronous; integrated circuits; memory reticle; nonstandard technology; performance limits; power distribution noise; processor reticle; simulation method; simultaneous switching; synchronous array-based architecture; transient analysis;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Wafer Scale Integration, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
181670
Link To Document :
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