ULtrafast dynamics of band-edge two- dimensional III–V semiconductor photonic crystal lasers

In this context, two-dimensional photonic crystals (2DPCs) have excited a lot of interest for their potential use as active photonic devices. PCs are a periodic arrangement of materials with different refractive indices where the periodicity is of the order of the wavelength of light, which confers them with exciting possibilities to manipulate light signals within small volumes of materials. In this work, we have fabricated an InP-based 2DPCs laser bonded with Silicon and explored its temporal capabilities. We report on the temporal properties of 1.55 mum InGaAs/InP 2D photonic crystal band edge lasers operating at room temperature. We performed the measurements with an up-conversion technique, which gives us the required temporal resolution (150 fs) adapted to the short time responses of these types of lasers. An analysis of the physics in play, modelling the transient response with a set of standard QW laser rate equations, give a spontaneous emission factor of beta=0.03 and a group velocity (5x10⁵ ms^-1) in these band-edge photonic crystals.