DocumentCode :
2784275
Title :
Novel Robust High Voltage ESD Clamps for LDMOS Protection
Author :
Walker, A.J. ; Ward, S.T. ; Puchner, H.
Author_Institution :
Cypress Semicond., San Jose, CA
fYear :
2007
fDate :
15-19 April 2007
Firstpage :
596
Lastpage :
597
Abstract :
Novel robust high voltage LDMOS ESD clamps with embedded SCR´s have been TLP tested and implemented in products showing these approaches to be especially useful in overcoming the inherent ESD weakness of LDMOS devices.
Keywords :
MOSFET; electrostatic discharge; thyristors; LDMOS ESD clamps; LDMOS devices; LDMOS protection; SCR; Breakdown voltage; CMOS process; CMOS technology; Clamps; Electric breakdown; Electrostatic discharge; Pins; Protection; Robustness; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
Type :
conf
DOI :
10.1109/RELPHY.2007.369968
Filename :
4227709
Link To Document :
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