Title :
An Insight into the High Current ESD Behavior of Drain Extended NMOS (DENMOS) Devices in Nanometer Scale CMOS Technologies
Author :
Chatterjee, Amitabh ; Pendharkar, Sameer ; Lin, Yen-Yi ; Duvvury, Charvaka ; Banerjee, Kaustav
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
Abstract :
Second breakdown phenomenon (It2) in drain extended NMOS (DENMOS) which is associated with complex triggering of the parasitic BJT is relatively less understood. We present experiments and models to understand the physics of snapback in DENMOS in nanometer scale technologies. Avalanche injection phenomenon at the drain contact has been analyzed for a 90 nm DENMOS transistor under high current stressing
Keywords :
CMOS integrated circuits; MOSFET; bipolar transistors; electrostatic discharge; nanotechnology; semiconductor device breakdown; semiconductor device models; 90 nm; DENMOS devices; DENMOS transistor; ESD behavior; avalanche injection phenomenon; drain extended NMOS devices; nanometer scale CMOS technologies; parasitic BJT; second breakdown phenomenon; CMOS technology; Current density; Electric breakdown; Electrostatic discharge; MOS devices; Nanoscale devices; Resistors; Silicon; Stress; Voltage;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369974
