DocumentCode :
2784542
Title :
New Understanding of Metal-Insulator-Metal (MIM) Capacitor Degradation Behavior
Author :
Hung, Chi-Chao ; Oates, Anthony S. ; Lin, H.C. ; Chang, Percy ; Wang, J.L. ; Huang, C.C. ; Yau, Y.W.
Author_Institution :
Taiwan Semicond. Manuf. Co., Ltd.
fYear :
2007
fDate :
15-19 April 2007
Firstpage :
630
Lastpage :
631
Abstract :
This work provides an innovative understanding of MIM capacitor degradation behavior under a wide range of constant current stress (CCS) conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current, and reverses after a certain period of time. A metal-insulator interlayer is observed to explain this reversal phenomenon.
Keywords :
MIM devices; capacitors; constant current sources; current density; electric breakdown; MIM capacitor degradation behavior; capacitance degradation; constant current stress; dielectric breakdown; metal-insulator interlayer; metal-insulator-metal capacitor; stress current density; Capacitance; Carbon capture and storage; Current density; Degradation; Dielectrics; MIM capacitors; Metal-insulator structures; Permittivity; Plasma temperature; Stress; MIM capacitor; capacitance degradation; charge trapping; metal-insulator interlayer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
Type :
conf
DOI :
10.1109/RELPHY.2007.369985
Filename :
4227726
Link To Document :
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