Title :
New Understanding of Metal-Insulator-Metal (MIM) Capacitor Degradation Behavior
Author :
Hung, Chi-Chao ; Oates, Anthony S. ; Lin, H.C. ; Chang, Percy ; Wang, J.L. ; Huang, C.C. ; Yau, Y.W.
Author_Institution :
Taiwan Semicond. Manuf. Co., Ltd.
Abstract :
This work provides an innovative understanding of MIM capacitor degradation behavior under a wide range of constant current stress (CCS) conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current, and reverses after a certain period of time. A metal-insulator interlayer is observed to explain this reversal phenomenon.
Keywords :
MIM devices; capacitors; constant current sources; current density; electric breakdown; MIM capacitor degradation behavior; capacitance degradation; constant current stress; dielectric breakdown; metal-insulator interlayer; metal-insulator-metal capacitor; stress current density; Capacitance; Carbon capture and storage; Current density; Degradation; Dielectrics; MIM capacitors; Metal-insulator structures; Permittivity; Plasma temperature; Stress; MIM capacitor; capacitance degradation; charge trapping; metal-insulator interlayer;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369985