DocumentCode :
2784572
Title :
Test Structure Design for Precise Understanding of Cu/Low-k Dielectric Reliability
Author :
Tan, T.L. ; Gan, C.L. ; Du, A.-Y. ; Cheng, C.K. ; Ng, C.M. ; Chan, L.
Author_Institution :
Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ.
fYear :
2007
fDate :
15-19 April 2007
Firstpage :
632
Lastpage :
633
Abstract :
Single line test structures are suggested for failure analysis and reliability improvement development, apart from using the conventional comb test structures. This is due to the challenges in controlling the damage after electrical tests as well as in pin-pointing sub-surface failures with present techniques. Three failure modes were observed in the new test structure, which can be identified by its I-V leakage characteristics. These also demonstrate the importance of including different geometrical layouts for backend reliability characterization
Keywords :
copper; low-k dielectric thin films; reliability; Cu; Cu/low-k dielectric reliability; comb test structures; current-voltage leakage characteristics; electrical tests; failure analysis; test structure design; Anodes; Delamination; Dielectric breakdown; Electric breakdown; Failure analysis; Leakage current; Materials science and technology; Materials testing; Semiconductor device testing; Voltage; Ta ion diffusion; carbon-doped low-k dielectric; delamination; single line test structure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
Type :
conf
DOI :
10.1109/RELPHY.2007.369986
Filename :
4227727
Link To Document :
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