Title :
Opto-electronic Properties of InGaAs Quantum Ring Infrared Photodetectors
Author :
Dai, Jong-Homg ; Lin, Yi-lung ; Lee, Si-Chen ; Jong-Horng Dai ; Yi-Lung Lin ; Si-Chen Lee
Author_Institution :
Department of Electrical Engineering & Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, 10617
Abstract :
The infrared photodetectors using InGaAs quantum ring (QR) structure are studied. The quantum ring was grown by first depositing InAs quantum dot (QD) on
Keywords :
atomic force microscope; photoluminescence; solid-source MBE; Annealing; Atomic force microscopy; Atomic measurements; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photodetectors; Quantum dots; Shape measurement; Substrates; Quantum dot infrared photodetector; Quantum ring infrared photodetector; atomic force microscope; photoluminescence; solid-source MBE;
Conference_Titel :
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN :
1-4244-0077-5
DOI :
10.1109/NANO.2006.247703
