Title :
SnO2nanorods prepared by inductively coupled plasma-enhanced chemical vapor deposition
Author :
Lee, Y.C. ; Tan, O.K. ; Huang, H. ; Tse, M.S. ; Lau, H.W.
Author_Institution :
Microelectronics Centre, School of Electrical & Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore, Email: eyclee@ntu.edu.sg
Abstract :
SnO2nanorods were successfully deposited on SiO2/Si substrate by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate (DBTDA) as the precursor. The SnO2nanorods were in situ grown without additional substrate heating. These nanorods have an average diameter between 19 and 27 nm and a length of 190 to 600 nm depending on the deposition parameters. Substrate distance and RF power showed notable effects on the formation of SnO2nanorods. These high surface area SnO2nanorods showed sensing properties to reducing gases like CO.
Keywords :
PECVD; SnO; nanorods; Chemical technology; Chemical vapor deposition; Gas detectors; Heating; Plasma chemistry; Plasma sources; Radio frequency; Scanning electron microscopy; Substrates; Thermal spraying; PECVD; SnO; nanorods;
Conference_Titel :
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN :
1-4244-0077-5
DOI :
10.1109/NANO.2006.247728
