• DocumentCode
    2785993
  • Title

    Channel guide InGaAs-GaAs-InGaP strained quantum well lasers on P-type GaAs substrate for high power operation

  • Author

    Sin, Y.K. ; Horikawa, H. ; Kamijoh, T.

  • Author_Institution
    Oki Electric Industry Co., Ltd
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    50
  • Lastpage
    51
  • Abstract
    Channel guide lasers are, for the first time, demonstrated with ln/sub 0.18/Ga/sub 0.82/As-GaAs-In/sub 0.49/Ga/sub 0.51/P strained quantum well heterostructure on p-type GaAs substrate (/spl lambda/L= 980nm). The uncoated lasers show CW laser thresholds of 12mA at RT and high output powers of 125mW.
  • Keywords
    Epitaxial growth; Epitaxial layers; Etching; Gallium arsenide; P-n junctions; Power generation; Power lasers; Quantum well lasers; Silicon compounds; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763566
  • Filename
    763566
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2785993