DocumentCode :
2786083
Title :
Optimization of InGaAs/InGaAsP MQW mqw semiconductor amplifiers
Author :
Jepsen, K.S. ; Mikkelsen, B. ; Yamaguchi, Masaki ; Stubkjaer, K.E.
Author_Institution :
Technical University of Denmark
fYear :
1992
fDate :
21-25 Sept. 1992
Firstpage :
64
Lastpage :
65
Abstract :
Semiconductor optical amplifiers (SOAs) based on quantum-wells (QW) are reported to have a low noise figure [1] and a large gain bandwidth [2] compared to bulk SOAs. These features make the QW SOA an attractive component for use as a pre-amplifier in future OEICs. In this paper the optimization of QW-structures for a low noise figure and a high gain is considered. Contrary to previous work [3], our model suggests that the noise figure does not depend critically on the number of wells. In addition, the predictions are compared to measurements of the noise figure and gain for a multiple quantum-well (MQW) amplifier.
Keywords :
Current density; Electrons; Indium gallium arsenide; Noise figure; Noise measurement; Quantum well devices; Semiconductor device noise; Semiconductor optical amplifiers; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
Type :
conf
DOI :
10.1109/ISLC.1992.763573
Filename :
763573
Link To Document :
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