Title :
Strain-induced effects on the performance of AlGalnP Visible Lasers
Author :
Hashimoto, J. ; Katsuyama, T. ; Shinkai, J. ; Yoshida, I. ; Hayashi, H.
Author_Institution :
Sumitomo Electric Industries Ltd.
Abstract :
We investigated strain-induced effects on the lasing condition of a strained AlGalnP laser in comparison with an unstrained device having similar band structure. Clear reduction in the threshold current density was observed by incorporating the strained quantum well structure.
Keywords :
Carrier confinement; Current density; Diode lasers; Laboratories; Light sources; Mirrors; Quantum well devices; Quantum well lasers; Research and development; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763627
