DocumentCode :
2786856
Title :
Ordered and disordered GalnP/AlGalnP Strained Layer Quantum Well Visible-Light Emitting Laser Diodes
Author :
van der Poel, C.J. ; Valster, A. ; Finke, M.N. ; Boermans, M.I.B.
Author_Institution :
Philips Optoclectronics Centre
fYear :
1992
fDate :
21-25 Sept. 1992
Firstpage :
182
Lastpage :
183
Abstract :
GalnP/AIGalnP visible light emitting laser diodes arc of great interest. for use in high-density Optical Data Storage and laser printing. Low electrical power consumption and reliable high optical power output at a wavelength of /spl lambda = 675nm are a prerequisite for these applications.
Keywords :
Capacitive sensors; Costs; Diode lasers; Electrons; Epitaxial growth; Optical materials; Optical saturation; Printing; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
Type :
conf
DOI :
10.1109/ISLC.1992.763628
Filename :
763628
Link To Document :
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