1.57 µm passively mode-locked wafer-fused semiconductor disk laser

Semiconductor disk lasers (SDLs) operating around 1.55 mum have been the subject of increasing interest. The performance of monolithically grown SDLs in this wavelength range suffers, however, from the poor quality of the InP-based distributed Bragg reflector (DBR). Recently, wafer fusion technique was applied to a long- wavelength SDL to avoid this obstacle. An active region grown on InP substrate was wafer fused to a GaAs/AlGaAs-based DBR resulting in a device operating at 1.57 mum with 2.6 W average output power and a near diffraction limited beam. Here we present the first mode-locked SDL using a wafer-fused gain reflector.