DocumentCode :
2787728
Title :
Will CMOS amplifiers ever Kick-GaAs?
Author :
Zampardi, P.J.
Author_Institution :
Skyworks Solutions, Inc, USA
fYear :
2010
fDate :
19-22 Sept. 2010
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, we present a discussion and comparison of CMOS and GaAs HBT technologies for handset power amplifiers. Our perspective is unique to other comparisons in that we actually have products in both technologies. To understand the application space where each of these technologies makes sense, we discuss current and near-term PA requirements as well as technology and technology support issues. Finally, we aim to dispel some the common misperceptions surrounding these technologies.
Keywords :
CMOS integrated circuits; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; power amplifiers; CMOS amplifiers; GaAs; GaAs HBT technology; handset power amplifiers; kick-GaAs; CMOS integrated circuits; CMOS technology; Gallium arsenide; Power amplifiers; Radio frequency; Reliability; Telephone sets;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2010 IEEE
Conference_Location :
San Jose, CA
ISSN :
0886-5930
Print_ISBN :
978-1-4244-5758-8
Type :
conf
DOI :
10.1109/CICC.2010.5617402
Filename :
5617402
Link To Document :
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