DocumentCode :
2789851
Title :
Far-infrared response of Schottky diodes: high-frequency limit
Author :
Mordovets, N.A. ; Kotel´nikov, I.N. ; Shul´man, A.Ya.
Author_Institution :
Academy of Sciences of the USSR
fYear :
1989
fDate :
0-0 1989
Firstpage :
272
Lastpage :
275
Abstract :
The rolloff of the Schottky-diode responsivity in the far infrared have been theoretically and experimentally studied. The measured data are compared with the theory taking into account the retardation of the carrier distribution function with respect to high-frequency electric field in the depletion layer of the semiconductor. The new highest possible cutoff frequency, following from this theory, differs considerably from generally accepted one.
Keywords :
Capacitance; Cutoff frequency; Detectors; Distribution functions; Electric variables measurement; Frequency dependence; Frequency estimation; Impedance; Motion detection; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Millimeter Wave and Far-Infrared Technology, 1989. ICMWFT '89. International Conference on
Conference_Location :
Beijing, China
Print_ISBN :
0-87942-717-5
Type :
conf
DOI :
10.1109/ICMWFT.1989.763823
Filename :
763823
Link To Document :
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