DocumentCode :
2790008
Title :
Far-infrared magneto-optical resonance as a fundamental method of semiconductor characterization - state of the art
Author :
Otsuka, E.
Author_Institution :
Osaka University
fYear :
1989
fDate :
0-0 1989
Firstpage :
307
Lastpage :
310
Abstract :
Time-resolved cyclotron resonance, intensity and linewidth measurement, as well as impurity Zeeman transition observa tion, with and without photoexcitation, may determine the quality of a semiconductor, leading to possible recommendation of crystal growth method.
Keywords :
Cyclotrons; Electrons; Magnetic field measurement; Magnetic resonance; Magnetooptic effects; Neodymium; Photonic band gap; Semiconductor impurities; Semiconductor materials; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Millimeter Wave and Far-Infrared Technology, 1989. ICMWFT '89. International Conference on
Conference_Location :
Beijing, China
Print_ISBN :
0-87942-717-5
Type :
conf
DOI :
10.1109/ICMWFT.1989.763833
Filename :
763833
Link To Document :
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