DocumentCode :
2791673
Title :
Evidence of many-body, fermi-energy edge singularity in InN films grown on GaN buffer layers
Author :
Mu, Xiaodong ; Ding, Yujie J. ; Wang, Kejia ; Jena, Debdeep ; Khurgin, Jacob B.
Author_Institution :
Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
We observed the strong enhancement of photoluminescence intensities close to electron Fermi energy as the result of the breakdown of k-selection rule for radiaitive recombination due to the localization of holes in InN films.
Keywords :
Buffer layers; Charge carrier processes; Electrons; Gallium nitride; Nonlinear optics; Optical films; Photoluminescence; Photonic band gap; Radiative recombination; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/QELS.2007.4431594
Filename :
4431594
Link To Document :
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