Title :
Electrical properties of TCNQ evaporated thin films
Author :
Kojima, K. ; Maeda, A. ; Ieda, Mirai
Author_Institution :
Dept. of Electr. Eng., Aichi Inst. of Technol., Toyota, Japan
Abstract :
Electroluminescence and electrical conduction in TCNQ (tetracyanoquinodimethane) thin films prepared by the vacuum-evaporation technique were investigated. The electrical properties depended strongly on the thin film deposition conditions, such as deposition rate and/or temperature and substrate temperature. The conduction currents were also affected by the electrode materials. Higher conductivity was observed in the specimen with a Cu anode than in that with Au or Al. The thermally stimulated current showed two peaks, at -120 and -20°C. The trap depths were estimated as 0.10 and 0.22 eV, respectively. X-ray diffraction studies showed that the specimen prepared at 280°C was crystalline, but the one prepared at 180°C was amorphous. An infrared absorption analysis showed that the main chemical composition of TCNQ has been largely preserved in the vacuum-evaporated films
Keywords :
X-ray diffraction examination of materials; electroluminescence; electronic conduction in insulating thin films; organic compounds; thermally stimulated currents; vacuum deposited coatings; -120 C; -20 C; 0.1 eV; 0.22 eV; 180 degC; 280 degC; Al anode; Au anode; Cu anode; TCNQ evaporated thin films; X-ray diffraction studies; conduction currents; deposition conditions; deposition rate; deposition temperature; electrical conduction; electrical properties; electrode materials; electroluminescence; infrared absorption analysis; preparation; substrate temperature; tetracyanoquinodimethane; thermally stimulated current; trap depths; vacuum-evaporated films; vacuum-evaporation technique; Chemical analysis; Conducting materials; Electrodes; Electroluminescent devices; Sputtering; Substrates; Temperature dependence; Thermal conductivity; Transistors; Vacuum technology;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on
Conference_Location :
Tokyo
Print_ISBN :
0-87942-568-7
DOI :
10.1109/ICPADM.1991.172039