Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET

Author

Shenoy, Praveen M. ; Bhalla, Anup ; Dolny, Gray M.

Author_Institution

Ind. Power Product Dev., Harris Semicond., Mountaintop, PA, USA

fYear

1999

fDate

1999

Firstpage

99

Lastpage

102

Abstract

In this paper, a novel device called the super junction MOSFET is analyzed using analytical modeling and numerical simulations. The effect of charge imbalance between the N and P pillars on the static and dynamic characteristics of the device is studied in detail. Simulations predict that this device is highly sensitive to charge imbalance if designed for optimum on-resistance. The breakdown voltage (BV) and E_off sensitivity can be reduced considerably by degrading the specific on-resistance R_on,sp. The physics of the static and dynamic behaviour of this device under charge imbalance is explained with the help of numerical simulations

Keywords

electric resistance; numerical analysis; power MOSFET; semiconductor device breakdown; semiconductor device models; N pillar; P pillar; analytical modeling; breakdown voltage; charge imbalance; dynamic behaviour; dynamic characteristics; numerical simulations; optimum on-resistance; specific on-resistance; static behaviour; static characteristics; super junction MOSFET; Degradation; Doping; Electric breakdown; Epitaxial layers; Equations; MOSFET circuits; Medium voltage; Neodymium; Power MOSFET; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764069

Filename

764069