DocumentCode :
2794561
Title :
High-speed Monolithically Integrated pin-HEMT Photoreceivers
Author :
Akatsu, Y.
Author_Institution :
NTT Opto-electronics Laboratories, Japan
fYear :
1995
fDate :
7-9 Aug. 1995
Firstpage :
33
Lastpage :
34
Keywords :
Bandwidth; Bit error rate; Electrons; Epitaxial layers; HEMTs; High speed optical techniques; Indium gallium arsenide; MODFETs; Optical modulation; Photodiodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Flat Panel Display Technology/Technologies for a Global Information Infrastructure/ICs for New Age Lightwave Communications/RF Optoelectronics, 1995 Digest of the LEOS Summer Topical Meetings
Conference_Location :
Keystone, CO, USA
Print_ISBN :
0-7803-2448-X
Type :
conf
DOI :
10.1109/LEOSST.1995.764150
Filename :
764150
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2794561
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