DocumentCode

27958

Title

40-nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macros for Automotive With 160-MHz Random Access for Code and Endurance Over 10 M Cycles for Data at the Junction Temperature of 170 $^{\\ci</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Kono, Takeshi ; Ito, Takao ; Tsuruda, T. ; Nishiyama, T. ; Nagasawa, T. ; Ogawa, Tomomi ; Kawashima, Yoshiya ; Hidaka, Hideto ; Yamauchi, Takashi</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Renesas Electron., Itami, Japan</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>49</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2014</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fDate</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Jan. 2014</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>154</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>166</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>First-ever 40-nm embedded split-gate MONOS (SG-MONOS) flash macros for automotive micro-controller unit (MCU) have been successfully developed. A SG-MONOS cell realizes high performance with low power consumption and intrinsically high data reliability thanks to the combination of split-gate and charge-trapping structure. In addition, newly developed circuit techniques greatly enhance the advantages of SG-MONOS cells and enable fast and reliable operations even at the junction temperature (Tj) of 170°C with small peripheral circuit area; 1) a sense amplifier with digital offset cancellation (SA-DOC) provides fast read operation over 160 MHz; 2) adaptable program current control scheme (APCCS) and intelligent erase scheme (IES) significantly decrease the program and erase time, which also results in improving the memory cells´ reliability; and, 3) 3-D stacked unit capacitors achieve area-efficient charge pump. Two types of embedded flash (eFlash) macros with these technologies, code macro of 2 MB and data macro of 64 KB, were fabricated in a 40-nm eFlash process. The code macro demonstrates the capability of 160-MHz random read operation at Tj= 170°C, reaching 5.1 GB/s read throughput by simultaneous 256 bits read-out from two code macros. The data macro achieves the program/erase endurance over 10 million cycles at Tj= 170°C without any software-assisted techniques.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>amplifiers; automotive electronics; charge pump circuits; flash memories; microcontrollers; 3D stacked unit capacitors; APCCS; IES; MCU; SA-DOC; SG-MONOS flash macros; adaptable program current control scheme; area-efficient charge pump; automotive microcontroller unit; bit rate 5.1 Gbit/s; charge-trapping structure; digital offset cancellation; embedded split-gate MONOS flash macros; frequency 160 MHz; intelligent erase scheme; memory cells reliability; memory size 2 MByte; memory size 64 KByte; peripheral circuit area; sense amplifier; size 40 nm; temperature 170 C; Automotive engineering; Computer architecture; Integrated circuit reliability; Microprocessors; Split gate flash memory cells; Transistors; 3-D stacked capacitor; Automotive application; digital offset cancellation; embedded flash memory; fast random read operation; flash-MCU; high data reliability; high-temperature operation; split-gate MONOS (SG-MONOS);</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fLanguage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>English</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Journal_Title</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Solid-State Circuits, IEEE Journal of</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Publisher</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>ieee</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>ISSN</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>0018-9200</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Type</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>jour</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>DOI</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10.1109/JSSC.2013.2280303</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Filename</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>6612753</div></div> </li> <div class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center'><div class='col-12 col-md-3 fw-bold mb-2 mb-md-0'><span class='text-muted small'>Link To Document</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><a class='text-break' href='https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=27958' target='_blank' rel=$ https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=27958