DocumentCode :
2797257
Title :
Process compensated micromechanical resonators
Author :
Ho, Gavin K. ; Perng, John K C ; Ayazi, Farrokh
Author_Institution :
Georgia Inst. of Technol., Atlanta
fYear :
2007
fDate :
21-25 Jan. 2007
Firstpage :
183
Lastpage :
186
Abstract :
Manufacturability and yield are the major challenges prior to adoption of micromechanical resonators as frequency references. In this paper, a design for manufacturability (DFM) technique to achieve absolute frequency accuracy is presented. Non-idealities of a deep reactive ion etching process are examined and determined to be random. The variations in resonator geometry are assumed to be locally systematic and are represented as a process bias. The effect of process bias on resonator center frequency is modeled and the procedure for optimizing for zero sensitivity is explained. Process bias on a 10 MHz optimized design was replicated with electron-beam lithography and supporting data demonstrating DFM is reported.
Keywords :
design for manufacture; micromechanical resonators; product design; sputter etching; DFM technique; absolute frequency accuracy; deep reactive ion etching process; design-for-manufacturability; electron-beam lithography; frequency 10 MHz; process compensated micromechanical resonators; resonator center frequency; Computer aided manufacturing; Design for manufacture; Design optimization; Etching; Flanges; Lithography; Micromachining; Micromechanical devices; Resonant frequency; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location :
Hyogo
ISSN :
1084-6999
Print_ISBN :
978-1-4244-095-5
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2007.4432960
Filename :
4432960
Link To Document :
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